- 您现在的位置：买卖IC网 > Sheet目录414 > FDA28N50F (Fairchild Semiconductor)MOSFET N-CH 500V 28A TO-3PN
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
V GS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
150
100
150 C
-55 C
10
5.5 V
o
o
25 C
10
o
2. T C = 25 C
1
0.3
0.06 0.1
*Notes:
1. 250 μ s Pulse Test
o
1 10
V DS ,Drain-Source Voltage[V]
20
1
4
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
5 6 7
V GS ,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.30
150
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.25
150 C
25 C
0.20
10
o
o
V GS = 10V
0.15
V GS = 20V
*Notes:
*Note: T J = 25 C
0.10
0
25 50 75
o
100
1
0.2
1. V GS = 0V
2. 250 μ s Pulse Test
0.6 1.0
1.4
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
8000
Ciss = Cgs + Cgd ( Cds = shorted )
10
V DS = 100V
6000
Coss = Cds + Cgd
Crss = Cgd
*Note:
8
V DS = 250V
V DS = 400V
1. V GS = 0V
C iss
2. f = 1MHz
6
4000
2000
C oss
C rss
4
2
0
0.1
1 10
V DS , Drain-Source Voltage [V]
30
0
0
*Note: I D = 28A
20 40 60 80
Q g , Total Gate Charge [nC]
100
?2012 Fairchild Semiconductor Corporation
FDA28N50F Rev. C1
3
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDA28N50
MOSFET N-CH 500V 28A TO-3PN
FDA33N25
MOSFET N-CH 250V 33A TO-3PN
FDA38N30
MOSFET N-CH 300V TO-3
FDA59N25
MOSFET N-CH 250V 59A TO-3P
FDA59N30
MOSFET N-CH 300V 59A TO-3P
FDA69N25
MOSFET N-CH 250V 69A TO-3P
FDA70N20
MOSFET N-CH 200V 70A TO-3P
FDA8440
MOSFET N-CH 40V 100A TO-3PN
相关代理商/技术参数
FDA28N50F_12
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 28A, 0.175??
FDA33N25
功能描述:MOSFET 250V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDA-37PF
制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDA-37SF
制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE
FDA38N30
功能描述:MOSFET UniFET1 300V N-chan MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDA4100LV
制造商:STMicroelectronics 功能描述:ABD AUDIO & POWER - Trays
F-DA50A
制造商:Cosel Usa Inc 功能描述:POWER SUPPLY; DAS SERIES HEAT SINK 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
F-DA50B
制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series